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Psychological Reactance to Leader Moral Hypocrisy
- McKenzie R. Rees, Isaac H. Smith, Andrew T. Soderberg
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- Journal:
- Business Ethics Quarterly , First View
- Published online by Cambridge University Press:
- 28 November 2023, pp. 1-28
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Drawing on early work on ethical leadership, we argue that when leaders engage in leader moral hypocrisy (i.e., ethical promotion without ethical demonstration), followers can experience psychological reactance—a negative response to a perceived restriction of freedom—which can have negative downstream consequences. In a survey of employee–manager dyads (study 1), we demonstrate that leader moral hypocrisy is positively associated with follower psychological reactance, which increases follower deviance. In two subsequent laboratory experiments, we find similar patterns of results (study 2) and explore potential alternative mechanisms (study 3). We demonstrate in a final experiment with working adults that the relationship between leader moral hypocrisy and psychological reactance is partly explained by increased perceptions of a leader’s use of power (study 4). We discuss the implications of our findings and advocate for further understanding of the risks associated with psychological reactance in response to leaders and other workplace situations.
Association between fish consumption and risk of dementia: a new study from China and a systematic literature review and meta-analysis
- Aishat T Bakre, Ruoling Chen, Ranjit Khutan, Li Wei, Tina Smith, Gordon Qin, Isaac M Danat, Weiju Zhou, Peter Schofield, Angela Clifford, Jiaji Wang, Arpana Verma, Cuilin Zhang, Jindong Ni
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- Journal:
- Public Health Nutrition / Volume 21 / Issue 10 / July 2018
- Published online by Cambridge University Press:
- 19 March 2018, pp. 1921-1932
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Objective
To assess the association of fish consumption with risk of dementia and its dose–response relationship, and investigate variations in the association among low-, middle- and high-income countries.
DesignA new community-based cross-sectional study and a systematic literature review.
SettingsUrban and rural communities in China; population-based studies systematically searched from worldwide literature.
SubjectsChinese adults aged ≥60 years in six provinces (n 6981) took part in a household health survey of dementia prevalence and risk factors. In addition, 33 964 participants from eleven published and eligible studies were included in the systematic review and meta-analysis.
ResultsIn the new study in China, 326 participants were diagnosed with dementia (4·7 %); those who consumed any amount of fish in the past two years v. those who consumed no fish had reduced risk of dementia (adjusted OR=0·73, 95 % CI 0·64, 0·99), but the dose–response relationship was not statistically significant. The meta-analysis of available data from the literature and the new study showed relative risk (RR) of dementia of 0·80 (95 % CI 0·74, 0·87) for people with fish consumption; the impact was similar among countries with different levels of income. Pooled dose–response data revealed RR (95 % CI) of 0·84 (0·72, 0·98), 0·78 (0·68, 0·90) and 0·77 (0·61, 0·98) in people with low, middle and high consumption of fish, respectively. Corresponding figures for Alzheimer’s disease were 0·88 (0·74, 1·04), 0·79 (0·65, 0·96) and 0·67 (0·58, 0·78), respectively.
ConclusionsGreater consumption of fish is associated with a lower risk of dementia. Increasing fish consumption may help prevent dementia worldwide regardless of income level.
Somatic, positive and negative domains of the Center for Epidemiological Studies Depression (CES-D) scale: a meta-analysis of genome-wide association studies
- A. Demirkan, J. Lahti, N. Direk, A. Viktorin, K. L. Lunetta, A. Terracciano, M. A. Nalls, T. Tanaka, K. Hek, M. Fornage, J. Wellmann, M. C. Cornelis, H. M. Ollila, L. Yu, J. A. Smith, L. C. Pilling, A. Isaacs, A. Palotie, W. V. Zhuang, A. Zonderman, J. D. Faul, A. Sutin, O. Meirelles, A. Mulas, A. Hofman, A. Uitterlinden, F. Rivadeneira, M. Perola, W. Zhao, V. Salomaa, K. Yaffe, A. I. Luik, NABEC, UKBEC, Y. Liu, J. Ding, P. Lichtenstein, M. Landén, E. Widen, D. R. Weir, D. J. Llewellyn, A. Murray, S. L. R. Kardia, J. G. Eriksson, K. Koenen, P. K. E. Magnusson, L. Ferrucci, T. H. Mosley, F. Cucca, B. A. Oostra, D. A. Bennett, T. Paunio, K. Berger, T. B. Harris, N. L. Pedersen, J. M. Murabito, H. Tiemeier, C. M. van Duijn, K. Räikkönen
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- Journal:
- Psychological Medicine / Volume 46 / Issue 8 / June 2016
- Published online by Cambridge University Press:
- 21 March 2016, pp. 1613-1623
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Background
Major depressive disorder (MDD) is moderately heritable, however genome-wide association studies (GWAS) for MDD, as well as for related continuous outcomes, have not shown consistent results. Attempts to elucidate the genetic basis of MDD may be hindered by heterogeneity in diagnosis. The Center for Epidemiological Studies Depression (CES-D) scale provides a widely used tool for measuring depressive symptoms clustered in four different domains which can be combined together into a total score but also can be analysed as separate symptom domains.
MethodWe performed a meta-analysis of GWAS of the CES-D symptom clusters. We recruited 12 cohorts with the 20- or 10-item CES-D scale (32 528 persons).
ResultsOne single nucleotide polymorphism (SNP), rs713224, located near the brain-expressed melatonin receptor (MTNR1A) gene, was associated with the somatic complaints domain of depression symptoms, with borderline genome-wide significance (pdiscovery = 3.82 × 10−8). The SNP was analysed in an additional five cohorts comprising the replication sample (6813 persons). However, the association was not consistent among the replication sample (pdiscovery+replication = 1.10 × 10−6) with evidence of heterogeneity.
ConclusionsDespite the effort to harmonize the phenotypes across cohorts and participants, our study is still underpowered to detect consistent association for depression, even by means of symptom classification. On the contrary, the SNP-based heritability and co-heritability estimation results suggest that a very minor part of the variation could be captured by GWAS, explaining the reason of sparse findings.
Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
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- By Tod C. Aeby, Melanie D. Altizer, Ronan A. Bakker, Meghann E. Batten, Anita K. Blanchard, Brian Bond, Megan A. Brady, Saweda A. Bright, Ellen L. Brock, Amy Brown, Ashley Carroll, Jori S. Carter, Frances Casey, Weldon Chafe, David Chelmow, Jessica M. Ciaburri, Stephen A. Cohen, Adrianne M. Colton, PonJola Coney, Jennifer A. Cross, Julie Zemaitis DeCesare, Layson L. Denney, Megan L. Evans, Nicole S. Fanning, Tanaz R. Ferzandi, Katie P. Friday, Nancy D. Gaba, Rajiv B. Gala, Andrew Galffy, Adrienne L. Gentry, Edward J. Gill, Philippe Girerd, Meredith Gray, Amy Hempel, Audra Jolyn Hill, Chris J. Hong, Kathryn A. Houston, Patricia S. Huguelet, Warner K. Huh, Jordan Hylton, Christine R. Isaacs, Alison F. Jacoby, Isaiah M. Johnson, Nicole W. Karjane, Emily E. Landers, Susan M. Lanni, Eduardo Lara-Torre, Lee A. Learman, Nikola Alexander Letham, Rachel K. Love, Richard Scott Lucidi, Elisabeth McGaw, Kimberly Woods McMorrow, Christopher A. Manipula, Kirk J. Matthews, Michelle Meglin, Megan Metcalf, Sarah H. Milton, Gaby Moawad, Christopher Morosky, Lindsay H. Morrell, Elizabeth L. Munter, Erin L. Murata, Amanda B. Murchison, Nguyet A. Nguyen, Nan G. O’Connell, Tony Ogburn, K. Nathan Parthasarathy, Thomas C. Peng, Ashley Peterson, Sarah Peterson, John G. Pierce, Amber Price, Heidi J. Purcell, Ronald M. Ramus, Nicole Calloway Rankins, Fidelma B. Rigby, Amanda H. Ritter, Barbara L. Robinson, Danielle Roncari, Lisa Rubinsak, Jennifer Salcedo, Mary T. Sale, Peter F. Schnatz, John W. Seeds, Kathryn Shaia, Karen Shelton, Megan M. Shine, Haller J. Smith, Roger P. Smith, Nancy A. Sokkary, Reni A. Soon, Aparna Sridhar, Lilja Stefansson, Laurie S. Swaim, Chemen M. Tate, Hong-Thao Thieu, Meredith S. Thomas, L. Chesney Thompson, Tiffany Tonismae, Angela M. Tran, Breanna Walker, Alan G. Waxman, C. Nathan Webb, Valerie L. Williams, Sarah B. Wilson, Elizabeth M. Yoselevsky, Amy E. Young
- Edited by David Chelmow, Virginia Commonwealth University, Christine R. Isaacs, Virginia Commonwealth University, Ashley Carroll, Virginia Commonwealth University
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- Acute Care and Emergency Gynecology
- Published online:
- 05 November 2014
- Print publication:
- 30 October 2014, pp ix-xiv
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Dynamic Properties of Spectrally Selective Reactively Sputtered Metal Oxides
- A.V. Adedeji, S.D. Worsley, T.L. Baker, R. Mundle, A.K. Pradhan, A.C. Ahyi, T. Isaacs-Smith
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- MRS Online Proceedings Library Archive / Volume 1494 / 2013
- Published online by Cambridge University Press:
- 10 May 2013, pp. 245-251
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- 2013
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Thin films of Transition Metal Oxides (TMOs) were deposited by reactive sputtering of pure transition metal targets in Argon-Oxygen gas mixture at elevated substrate temperature for efficient energy consumption. The atomic composition and thickness of the TMO films was determined by Rutherford Backscattering Spectroscopy (RBS). Optical transmittance and reflectance spectrum of the films on quartz substrate was measured with thin film measuring system at room temperature and slightly elevated temperature. The surface morphology and structure of the TMO films was determined with Atomic Force Microscope (AFM).
Effective Refractory Metal Alloy Barrier Layer for High Temperature Microelectronic Device Application
- A.V. Adedeji, M.R. Ross, N. Hamden, A.K. Pradhan, A.C. Ahyi, T. Isaacs-Smith
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1519 / 2013
- Published online by Cambridge University Press:
- 21 December 2012, mrsf12-1519-mm11-02
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- 2013
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The oxidation and diffusion of Molybdenum layer sputter-deposited on 2μm CVD diamond grown on silicon substrate has been studied. The Mo layer was protected by refractory metal silicide barrier layer. The samples were annealed in air ambient at 500°C over 30 hours. The oxidation of the samples was monitored with Rutherford Backscattering Spectroscopy (RBS). The effect of reactive sputtering of refractory silicide target in argon-nitrogen gas mixture (5% nitrogen by flow rate) on the barrier characteristics was investigated. The sheet resistivity of the barrier layer on SiC substrates as a function of annealing time in air at 500°C is reported. The surface structure and morphology of the refractory silicide films was determined with X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM).
Contributors
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- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. 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Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
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- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen
- J. R. Williams, T. Isaacs-Smith, S. Wang, C. Ahyi, R. M. Lawless, C.C. Tin, S. Dhar, A. Franceschetti, S.T. Pantelides, L.C. Feldman, G. Chung, M. Chisholm
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- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E8.1
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- 2003
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The interface passivation process based on post-oxidation, high temperature anneals in nitric oxide (NO) is well established for SiO2 on (0001) 4H-SiC. The NO process results in an order of magnitude or more reduction in the interface state density near the 4H conduction band edge. However, trap densities are still high compared to those measured for Si / SiO2 passivated with post-oxidation anneals in hydrogen. Herein, we report the results of studies for 4H-SiC / SiO2 undertaken to determine the effects of additional passivation anneals in hydrogen when these anneals are carried out following a standard NO anneal. After NO passivation and Pt deposition to form gate contacts, post-metallization anneals in hydrogen further reduced the trap density from approximately 1.5 × 1012 cm−2eV−1 to about 6 × 1011 cm−2eV−1 at a trap energy of 0.1 eV below the band edge for dry thermal oxides on both (0001) and (11–20) 4H-SiC.
The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al0.4Ga0.6N
- K. O. Schweitz, T. G. Pribicko, S. E. Mohney, T. F. Isaacs-Smith, J. Williams, M. Pophristic, D. Gotthold, R. Birkhahn, I. Ferguson
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- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E6.2
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- 2001
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As the group III nitride semiconductor technology matures, an increasing number of devices are being fabricated with high Al fraction AlGaN. In this study, ohmic behavior is achieved using Ti/Al/Pt/Au contacts to n-Al0.4Ga0.6N, which is the highest Al fraction for which ohmic contact formation has been reported. The effect of contact composition, pretreatment, and annealing conditions is studied by 30 s isochronal annealing experiments between 500°C and 1000°C. A specific contact resistance ρC of (5±3) × 10−5 ωcm2 is obtained using Ti(26 nm)/Al(74 nm)/Pt(50 nm)/Au(50 nm) contacts to n-Al0.4Ga0.6N annealed in N2 at 800°C; however, this value is shown to be artificially high because the metal sheet resistance RM is 4 ω/⊏ causing an artifact in the data analysis. All contacts with ρC < 10−3 ωcm2 exhibit a local minimum in ρC after annealing at 800°C. The observed increase in ρC upon annealing at 850°C and 900°C, however, is not an artifact originating from a change in RM. The top Au layer is found to play an active role in forming ohmic contacts with low ρC, since omitting the Au layer yields an increase in ρC of two orders of magnitude after annealing at 800°C. Furthermore, leaving out the Au layer requires an annealing temperature of 700°C to result in linear I-V curves for currents up to 100 µA, as opposed to 500°C when the Au layer is present. The role of Au is further studied in Ti(26 nm)/Al(74 nm)/Ni(50 nm)/Au(50 nm) contacts, where Rutherford backscattering spectroscopy reveals Ga in the metal layer and/or Au buried deeper than the original semiconductor-metal interface, and x-ray diffraction indicates the formation of new phases to happen concurrently with a decrease in ρC of three orders of magnitude.
Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance
- J. Y. Lin, S. E. Mohney, M. Smalley, J. Crofton, J. R. Williams, T. Isaacs-Smith
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- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H7.3
- Print publication:
- 2000
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The influence of composition on Al-Ti ohmic contacts to 4H p-SiC was studied. When NA was 7 x 1018 cm−3, contacts with 70 wt.% or more Al became ohmic when annealed at 1000°C for 2 min, whereas when there was 60 wt.% or less Al, the contacts did not become ohmic even when annealed under more severe conditions (longer times and/or higher temperatures). Spiking of the contact metallization always accompanied ohmic behavior and could be correlated with Al-Ti compositions that contain both an Al-rich liquid and solid TiAl3 at 1000°C prior to reaction with SiC or evaporative loss of Al. For the 70 wt.× contacts, a specific contact resistance of 1.5 × 10−4 Ω cm2 was measured along with spiking of the metallization into the SiC with a room-mean-square interfacial roughness of 150 Å and a maximum spiking depth of 1200 Å. Although still a concern, this spiking was less severe than observed for the 90 wt.× composition. A conductive CrB2 cap layer was next demonstrated to retard evaporation of Al during annealing of the Al-Ti contacts with 70 wt.× Al. The cap allowed use of thinner contact layers, reducing the depth of spiking and improving the surface morphology and edge definition of the ohmic contacts, with a one order of magnitude penalty in the specific contact resistance.
Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System
- S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S.-G. Kim, S. J. PennycooK, G. Duscher, L. C. Feldman, K. Mcdonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H3.3
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- 2000
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This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiCSiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.
The Response of High Voltage 4H-SiC P-N Junction Diodes to Different Edge Termination Techniques
- T. N. Oder, C. C. Tin, J. R. Williams, T. Isaacs-Smith, V. Madangarli, T. S. Sudarshan
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- Journal:
- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 101
- Print publication:
- 1998
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Edge termination is an important aspect in the design of high power p-n junction devices. In this paper, we compare the breakdown characteristics of 4H-SiC p+-n diodes with oxide passivation and with edge termination using either low or high energy ion implantations. N- and p-type epilayers of 4H-SiC were grown by chemical vapor deposition on n+ 4H-SiC wafers. Circular mesa structures of different diameters were patterned and isolated by reactive ion etching. Four types of samples were fabricated. The first group was not implanted or passivated and was left for control. The second type consisted of oxide-passivated diode structures while the third and fourth types were ion implanted with 30 keV Ar+ and 2.2 MeV He+ ions, respectively. The time dependent breakdown characteristics were determined using a fast voltage ramp technique. The reverse bias breakdown voltages and leakage currents of these diodes were different for the different types of the edge termination. Diodes terminated using 2.2 MeV ion implantation yielded the best breakdown characteristics. A majority of the diodes exhibited abrupt breakdown.
High Electric Field Breakdown of 4H-SiC PN Junction Diodes
- C. C. Tin, V. Madangarli, R. Hu, E. Luckowski, J. Casady, T. Isaacs-Smith, G. Gradinaru, T. S. Sudarshan, R. W. Johnson
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 111
- Print publication:
- 1996
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We have characterized the high electric field breakdown process of several epitaxial 4H-SiC p-n structures with oxide passivation. The breakdown voltage was found to be dependent on the size of the diode structures as well as their proximity to any structural defects. The time dependence of the breakdown process was also measured to determine the characteristics of the breakdown mechanism. This time dependence measurement provides an indication of the quality of the diode structures. Both soft and abrupt breakdown mechanisms were observed showing the influence of defects on the high field behavior of the diode structures. Measurements done with and without the use of Fluorinert fluid did not show any difference in the breakdown voltage indicating that surface flashover breakdown mechanism did not play a major role in the avalanche breakdown process.
Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome
- E. D. Luckowski, J. R. Williams, M. J. Bozack, T. Isaacs-Smith, J. Crofton
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 119
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- 1996
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Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). In comparison to contacts formed on 6H-SiC using pure Ni, the electrical characteristics of these NiCr contacts are similar (∼ 1E-5 Ω-cm2 for moderately doped material), and composite Au/NiCr contacts exhibit good stability during long-term anneals (∼ 2500 hr) at 300 C without the requirement of a diffusion barrier layer between the ohmic contact layer and the Au cap layer. The use of NiCr also results in success rates near 100% for direct wire bonding to the Au cap layers.
Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique
- T. S. Sudarshan, V. P. Madangarli, G. Gradinaru, C. C. Tin, R. Hu, T. Isaacs-Smith
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- Journal:
- MRS Online Proceedings Library Archive / Volume 423 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 99
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- 1996
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The current vs voltage characteristics of 4H-SiC MOS capacitors under deep depletion are obtained by a fast ramp response technique so as to obtain the maximum field that can be applied to the MOS structure without the failure of either the semiconductor or the oxide layer. The experiments on n-type 4H SiC wafers having a 5 μm thick epilayer of 1015 – 1016 cm−3 doping concentration and an oxide layer 1200Å – 1500Å thick, indicate the significant influence of the oxide quality and defects in the semiconductor on the nature of the current response during accumulation and deep depletion measurements. The effect of the conductivity of the oxide layer is reflected clearly in the current response, even though classical C-V measurements do not indicate any abnormality. Apart from obtaining the maximum breakdown fields of the semiconductor and the oxide, the fast-ramp response technique provides useful information about the generation processes associated with defects in the MOS structure.